For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi
On the measurement of cranial thickness at nasion on cephalographs
β Scribed by Shmuel Einy; Patricia Smith; Adrian Becker
- Publisher
- John Wiley and Sons
- Year
- 1984
- Tongue
- English
- Weight
- 138 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0002-9483
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