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On the Limitations of Silicon for I-MOS Integration

✍ Scribed by Savio, A.; Monfray, S.; Charbuillet, C.; Skotnicki, T.


Book ID
114619571
Publisher
IEEE
Year
2009
Tongue
English
Weight
440 KB
Volume
56
Category
Article
ISSN
0018-9383

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## Abstract A novel windowed growth technique that allows for the exposure of a smooth silicon surface for MOS circuitry between AlGaN/GaN HEMT layers has been developed. A sacrificial oxide based dielectric stack is used to protect regions of the silicon surface before growth by ammonia‐MBE. SIMS