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On the I-U Characteristics of n-Au-CdS-Te Thin Film Diodes

โœ Scribed by Kassing, R. ;Schenke, L.


Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
153 KB
Volume
3
Category
Article
ISSN
0031-8965

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Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (ยขB.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)