On the Growth of Gallium Arsenide Crystals from the Melt
โ Scribed by S. G. Ellis
- Book ID
- 126654160
- Publisher
- American Institute of Physics
- Year
- 1959
- Tongue
- English
- Weight
- 448 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0021-8979
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๐ SIMILAR VOLUMES
Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con
## Abstract It is shown in the present work that copper additives influence substantially the growth of Ga crystals from a melt which is expressed in different ways, depending on the impurity concentration. With rising copper concentrations we observed a substantial retarding in the growth rates as