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On the growth and characterization of the system TlBiSe2–TlBiTe2

✍ Scribed by Toubektsis, S. N. ;Kalomiros, J. A. ;Giobliakis, L. V. ;Pabaskevo-poulos, K. M. ;Anagnostopotjlos, A. N. ;Polychroniadis, E. K.


Book ID
105379912
Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
355 KB
Volume
101
Category
Article
ISSN
0031-8965

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T1BiSe2 thin films were fabricated by electron-beam evaporation and the influence of the deposition rate on the growth was investigated by transmission electron microscopy (TEM) and IR reflectivity measurements in the plasma edge reflectance region. It was determined that depending on the deposition