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On the forward current-voltage characteristics of p+-n-n+ (n+-p-p+) epitaxial diodes

✍ Scribed by Ching-Yuan Wu

Book ID
107856465
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
567 KB
Volume
23
Category
Article
ISSN
0038-1101

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## Abstract We successfully fabricated a diamond diode, namely a Schottky p–n diode (SPND), which is composed of a fully depleted n‐type active layer sandwiched between a highly doped p‐type layer and a Schottky metal. The diamond SPND showed a high forward current density (over 4000 A cm^βˆ’2^ at 6