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Diamond Schottky p-n diode with high forward current density

✍ Scribed by Makino, Toshiharu ;Tanimoto, Satoshi ;Kato, Hiromitsu ;Tokuda, Norio ;Ogura, Masahiko ;Takeuchi, Daisuke ;Oyama, Kazuhiro ;Ohashi, Hiromichi ;Okushi, Hideyo ;Yamasaki, Satoshi

Book ID
105365671
Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
243 KB
Volume
206
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We successfully fabricated a diamond diode, namely a Schottky p–n diode (SPND), which is composed of a fully depleted n‐type active layer sandwiched between a highly doped p‐type layer and a Schottky metal. The diamond SPND showed a high forward current density (over 4000 A cm^βˆ’2^ at 6 V) with a low built‐in voltage (∼1.5 V) at room temperature while maintaining a high rectification ratio of ∼10^10^. Further improvement of the high forward current density characteristics was found at high temperature. The SPND can be realized with higher forward current density than that of conventional diamond Schottky barrier diode, p–n diode, and recently proposed merged diodes, while maintaining the high rectification ratio.

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