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On the formation of antiphase domains in the system of GaAs on Ge

โœ Scribed by Yuan Li; G. Salviati; M.M.G. Bongers; L. Lazzarini; L. Nasi; L.J. Giling

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
815 KB
Volume
163
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES

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A theory of formation of one-component, circular domains in mixed lipid monolayers was developed using the language of the thermodynamics of micellar formation and the notion of the wedge-like molecular asymmetry, developed earlier. Some justifications concerning the bilayer case were also done. Aft

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## Abstract Durch Pyrolyse von Ga (CH~3~)~3~๏ฃฟAsH~3~๏ฃฟH~2~ wurden GaAsโ€Epitaxieschichten auf (111)โ€, (110)โ€ und (100)โ€Geโ€Substraten abgeschieden. In dieser Arbeit wird der EinfluรŸ der Wachstumsbedingungen und des Gitterunterschiedes von GaAs und Ge auf die Qualitรคt der GaAsโ€Epitaxieschichten beschrie