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On the fall time of silicon planar transistors with constant base current drive

✍ Scribed by Srivastava, Ashok

Book ID
114445578
Publisher
Institution of Electrical Engineers
Year
1977
Weight
98 KB
Volume
15
Category
Article
ISSN
0018-9146

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A model for the silicon-on-insulator field effect transistor in a thin layer is presented which is not restricted by the charge sheet assumption and does not omit the substrate voltage drop. It is based on full determination of all surface potentials of the onedimensional MISIS structure. Threshold