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On the effects of threshold switching and memory in In2 Te3 thin amorphous films

✍ Scribed by Balevičius, S. ;Česnys, A. ;Deksnys, A.


Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
162 KB
Volume
32
Category
Article
ISSN
0031-8965

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The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge 2 Sb 2 Te 5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge 2 Sb