On the EBIC contrast of dislocations
β Scribed by Dr. L. Pasemann
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 110 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The EBIC data obtained from individual edge and Frank partial dislocations ^i^n Si, and described in other publications, are related to defect parameters, such as the capture crossβsection for minority carriers, which determine electrical recombination properties of dislocations. A two
## Abstract It is found by the method of transmission electron microscopy that the main elements of dislocation structure of deformed corundum are spatial triple dislocation nodes, recombination zones and dislocation network fragments. The structure of dislocation nodes is analyzed. It is shown tha