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On the design of doping concentration profiles for GaAs transferred-electron device layers

✍ Scribed by A.R. Batchelor

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 494 KB
Volume: 35
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(92)90045-e

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