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On the base region minority carrier concentration in narrow-base transistors

โœ Scribed by McCleer, P.J.; Haddad, G.I.

Book ID
114592677
Publisher
IEEE
Year
1978
Tongue
English
Weight
409 KB
Volume
25
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

On the base region in very small geometr
On the base region in very small geometry, bipolar transistors
โœ E.H. Stevens ๐Ÿ“‚ Article ๐Ÿ“… 1984 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 900 KB

## Relationships between base region properties and the performance of very small geometry, bipolar transistors are discussed. It is shown that simultaneously obtaining high current gain, low sensitivity to ionic charge, and fast switching from logic gates requires a compromise in designing the tr