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On Electron Mechanism of Slow Charge Relaxation on Semiconductor Surfaces

✍ Scribed by Kozlov, S. X. ;Novototskii-Vlasov, Yu. F.


Publisher
John Wiley and Sons
Year
1971
Tongue
English
Weight
598 KB
Volume
6
Category
Article
ISSN
0031-8965

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## Abstract A new model is proposed for slow non‐exponential relaxations on germanium surfaces in the d. c. field‐effect. It is based on the diffusion of induced charges on localized centres uniformly distributed in the surface oxide layer. The theory is compared with both previous and new experime