The atomic geometry and the electronic structure of GaAs(l 1 0) and Si(1 I I) with full coverage of chemisorbed hydrogen is described in the scheme of the density functional theory and using norm-conserving pseudopotentials, as ideal prototypes of semiconductor surfaces interacting with hydrogen. Th
β¦ LIBER β¦
Theory of electronic excitations on semiconductor surfaces
β Scribed by Steven G. Louie
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 412 KB
- Volume
- 60-61
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Hydrogen on semiconductor surfaces: Theo
β
C.M. Bertoni; F. Finocchi; F. Bernardini; M.Buongiorno Nardelli
π
Article
π
1991
π
Elsevier Science
π
English
β 480 KB
On the electronic theory of gas chemisor
β
F. Garcia-Moliner
π
Article
π
1969
π
Elsevier Science
π
English
β 1004 KB
Electronic and vibronic excitations of s
β
Hans LΓΌth
π
Article
π
1983
π
Elsevier Science
β 497 KB
Theory of surfactant-mediated growth on
β
Efthimios Kaxiras; Daniel Kandel
π
Article
π
1996
π
Elsevier Science
π
English
β 232 KB
Neutralization of ions at an electronica
β
Hai-Woong Lee; William C. Murphy; Thomas F. George
π
Article
π
1982
π
Elsevier Science
π
English
β 366 KB
Nculr&zatlon of posrt~ve tons colhdmg with a semtconduclor surface ts studtcd It ts shown that the ncutr&!atton probablty can bc signtl-tcantly enhanced tf the surfxc exposed to the unptngmg ions ts clectromcaliy c\cltcd The baste reason bchtnd thts IS that the tmpmgtng tons have caster xccss IO the
Electronic-state control of amino acids
β
Masato Oda; Takashi Nakayama
π
Article
π
2005
π
Elsevier Science
π
English
β 105 KB