On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs

✍ Scribed by M.J. Bailey; C. Jeynes; B.J. Sealy; R.P. Webb; R.M. Gwilliam

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 738 KB
• Volume: 268
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2010.02.033

✦ Synopsis

High fluence (>10 17 H/cm 2 ) ion implantation of H in GaAs is suitable for the ion cut process, and produces H bubbles under the surface which may cause blistering. By comparing the destructive depth profiling of these implants by secondary ion mass spectrometry (SIMS) with non-destructive profiling by elastic recoil detection analysis (ERD), we demonstrate that SIMS underestimates total H content by up to a factor of 2 due to undetected H escaping from bubbles during analysis. We also show that the depth of the maximum H concentration from SIMS can be in error by 20% due to large variations in the sputter rate through the profile.