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OMVPE of GaN and AIN films by metal alkyls and hydrazine

✍ Scribed by D.K. Gaskill; N. Bottka; M.C. Lin

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
540 KB
Volume
77
Category
Article
ISSN
0022-0248

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## Abstract We investigated the electroluminescence (EL) properties of europium (Eu)‐doped GaN‐based red light‐emitting diode (LED). Under current injection, the energy transfer from the GaN host material to Eu^3+^ ions successfully occurred and the red emission from Eu^3+^ ions was observed with n