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Oligothiophenes of DDnT and DPnT type: Morphology, field effect transistors, performance in vacuum and in air

✍ Scribed by M. Rittner; P. Baeuerle; G. Goetz; H. Schweizer; F.J. Baltá Calleja; M.H. Pilkuhn


Book ID
116897872
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
275 KB
Volume
156
Category
Article
ISSN
0379-6779

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## Abstract Field effect transistors (FET) with bottom gate/bottom contact arrangement are constructed using composites of deoxyribonucleic acid (DNA) and nanoparticulate zinc oxide as semiconductor. Polycrystalline ZnO, is tethered onto double stranded DNA by means of a chemical bath deposition (C