Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers

✍ Scribed by Gessmann, T.; Li, Y.-L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, J. K.

• Book ID: 115486850
• Publisher: American Institute of Physics
• Year: 2002
• Tongue: English
• Weight: 301 KB
• Volume: 80
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1445807