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Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1−xN capping layers

✍ Scribed by Th. Gessmann; Y. -L. Li; E. L. Waldron; J. W. Graff; E. F. Schubert; J. K. Sheu

Book ID: 107452767
Publisher: Springer US
Year: 2002
Tongue: English
Weight: 341 KB
Volume: 31
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-002-0094-7

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Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers

✍ Gessmann, T.; Li, Y.-L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, J. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 301 KB