Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors

✍ Scribed by Kuo-Hui Yu; Kun-Wei Lin; Shiou-Ying Cheng; Chin-Chuan Cheng; Jing-Yuh Chen; Cheng-Zu Wu; Wen-Chau Liu

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 381 KB
• Volume: 30
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2001.1010