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Observation of Non-Gaussian Conductance Fluctuations at Low Temperatures in Si:P(B) at the Metal-Insulator Transition

✍ Scribed by Kar, Swastik; Raychaudhuri, A. K.; Ghosh, Arindam; Löhneysen, H. v.; Weiss, G.


Book ID
120347344
Publisher
The American Physical Society
Year
2003
Tongue
English
Weight
188 KB
Volume
91
Category
Article
ISSN
0031-9007

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We present results of 1=f noise measurements at low frequency (10 -3 ¡ f ¡ 10 Hz) and at low temperatures (1 K ¡ T ¡ 20 K) in single crystals of Si doped with P and B. The doping concentration n is close to the critical composition nc of the metal-insulator transition (MIT). We observed that the noi