𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Numerical study of the Raman effect and its impact on soliton-dragging logic gates

✍ Scribed by Chen, C.-J.; Menyuk, C. R.; Islam, M. N.; Stolen, R. H.

Book ID
115418676
Publisher
Optical Society of America
Year
1991
Tongue
English
Weight
407 KB
Volume
16
Category
Article
ISSN
0146-9592

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

A study of the selective gate recess etc
A study of the selective gate recess etching technology and its effects on the microwave properties of pHEMT
✍ Li Hongqin; Xin Guanqun; Sun Xiaowei πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 125 KB πŸ‘ 2 views

## Abstract The selective gate recess etching technology has been investigated extensively using citric acid and H~2~O~2~ etchant for AlGaAs/InGaAs/GaAs pHEMT in this paper. A suitable ratio of this etchant has been determined by experiment. Then we studied the effect of the gate recess depth on th