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A study of the selective gate recess etching technology and its effects on the microwave properties of pHEMT

✍ Scribed by Li Hongqin; Xin Guanqun; Sun Xiaowei

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
125 KB
Volume
30
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

The selective gate recess etching technology has been investigated extensively using citric acid and H~2~O~2~ etchant for AlGaAs/InGaAs/GaAs pHEMT in this paper. A suitable ratio of this etchant has been determined by experiment. Then we studied the effect of the gate recess depth on the microwave properties of a 0.8 ΞΌm gate length pHEMT. The recess depth was varied by changing the recess etch time, and was measured by Taylor–Hobson test instruments. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 410–412, 2001.

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