the reactor, chemical reactions in the gas phase and on the substrate surface, and multicomponent diffusion processes A numerical model of a three-dimensional, horizontal channel, chemical vapor deposition reactor is presented in order to study of precursor species in the gas phase due to temperature gallium arsenide growth from trimethylgallium and arsine source and concentration gradients. As a result, most of the nureactants. Fluid flow and temperature predictions inside the reactor merical models derived in the past have invoked simpliare obtained using the vorticity-velocity form of the three-dimenfying assumptions, thereby focusing either on multidimensional, steady-state Navier-Stokes equations coupled with a desional flow field and temperature predictions or on tailed energy balance equation inside the reactor and on its walls.
Detailed gas phase and surface chemistry mechanisms are used to chemistry aspects.
predict the chemical species profiles inside the reactor, the growth
In the first approach, priority is given to understanding rate distribution on the substrate, and the level of carbon incorporaheat and mass transfer inside the CVD reactor while the tion into the grown layer. The species diffusion velocities are written growth rate is estimated in some simple form, e.g., by using the recent theory of iterative transport algorithms and account assuming that the deposition process is diffusion limited.
for both thermal diffusion and multicomponent diffusion processes.
The influence of susceptor temperature and inlet composition on With the significant increase in computer capabilities over growth rate and carbon incorporation is found to agree well with the last decade, CVD flow models have expanded from previous numerical and experimental work. แฎ 1996 Academic Press, Inc. two-dimensional simulations and parabolic threedimensional models [12, 13] to full three-dimensional calculations [14][15][16]. A better understanding of mixed convec-