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Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor

✍ Scribed by Sengouga, N.; Meftah, Af.; Meftah, Am.; Henini, M.


Book ID
122271460
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
548 KB
Volume
24
Category
Article
ISSN
1369-8001

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