๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Numerical Simulation of Semiconductor Crystal Growth by Directional Melt Solidification

โœ Scribed by V. A. Goncharov


Book ID
110291432
Publisher
Springer
Year
2001
Tongue
English
Weight
54 KB
Volume
35
Category
Article
ISSN
0040-5795

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Numerical simulation of oscillatory flow
โœ Yasunori Okano; Nicholas Audet; Sadik Dost; Yasuhiro Hayakawa; Masashi Kumagawa ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 162 KB ๐Ÿ‘ 2 views

Oscillatory flow present in the melt during InSb single crystal growth using an RF-heating Czochralski method has been numerically investigated by means of the finite difference method using the HSMAC algorithm. The thermal boundary conditions required for the numerical simulation model were obtaine