𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors

✍ Scribed by Petasecca, M.; Moscatelli, F.; Passeri, D.; Pignatel, G.U.

Book ID
121358514
Publisher
IEEE
Year
2006
Tongue
English
Weight
233 KB
Volume
53
Category
Article
ISSN
0018-9499

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Numerical simulation of radiation damage
Numerical simulation of radiation damage effects in p-type silicon detectors
✍ M. Petasecca; F. Moscatelli; D. Passeri; G.U. Pignatel; C. Scarpello πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 158 KB

In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable approach to optimize the long-term radiation hardness of silicon detectors. In this work, we present a numerical model for the simulation of radiation damage effects in p-type silicon,

[IEEE 1999 Fifth European Conference on
[IEEE 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 - Fontevraud, France (13-17 Sept. 1999)] 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) - Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon
✍ Casse, G.; Allport, P.P.; Hanlon, M. πŸ“‚ Article πŸ“… 2000 πŸ› IEEE βš– 431 KB