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Numerical simulation of current–voltage characteristics of silicon photoconductive circuit elements

✍ Scribed by H. Shakouri; J. J. Liou

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
669 KB
Volume
6
Category
Article
ISSN
0894-3370

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✦ Synopsis

Photoconductive circuit elements (PCEs) are suitable for switching applications: they can be turned on and off rapidly, they can conduct a large current in the 'on' state when applying a laser or other optical excitation containing high energy photons exceeding the silicon band gap energy, they have a large resistance in the 'off' state when the light is off, and they can be fabricated using a simple process. We report the steadystate characteristics of PCEs simulated from a two-dimensional simulator called PISCES-2B. The effects of the conducting channel length, the resistivity of the intrinsic silicon, and the type of contact region on the performance of the PCE will be investigated and discussed. Based on the simulation results, optimal PCE device make-ups will also be suggested.

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