Numerical and analytical modelling of electron transport in heterojunction bipolar transistors operating in the coherent regime
โ Scribed by Khrenov, G; Kulkova, E
- Book ID
- 125526177
- Publisher
- Institute of Physics
- Year
- 1996
- Tongue
- English
- Weight
- 117 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0268-1242
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A detailed one-dimensional energy transport model for unipolar GaAs/AIGaAs heterojunction structures is implemented, by extending the basic transport equations to include the energy balance equation for electrons. A non-uniform grid-mesh is used to obtain short simulation times, while the grid-dista
We describe an analytical approach to modeling NPN InP-based heterojunction bipolar transistors using a Gummel Poon model. Starting from an initial, physical description of the device's epitaxial structure and geometry, this physics-based model is utilized to simulate the device's operation using a