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Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs

โœ Scribed by Shwu-Jing Chang; Chien-Ping Lee


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
561 KB
Volume
39
Category
Article
ISSN
0038-1101

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๐Ÿ“œ SIMILAR VOLUMES


TRANSIENT ANALYSIS OF n-TIER GaAs MESFET
โœ SHIRLEY Y. CHAN; EDWARD K. N. YUNG ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 651 KB

The performances of n-tier GaAs MESFET matrix amplifiers are studied in the time domain. The model is developed incorporating the parasitic resistive loss and internal coupling capacitance of the active device. Techniques are contemplated to transform the matrix amplifier into a set of coupled multi