The Boltzmann transport equation is used to derive a set of conservation equations which is capable of describing the electron transport phenomena in a single-valley semiconductor. These conservation equations are averaged over the different valleys of the conduction band to develop another set of e
A transient numerical scheme for the simulation of GaAs MESFETs and circuits
β Scribed by Shuo Xiao; Chang Huang
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 472 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0038-1101
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