𝔖 Bobbio Scriptorium

✦ LIBER ✦

Numerical analysis of slow current transients and power compression in GaAs FETs

✍ Scribed by Kazami, Y.; Kasai, D.; Horio, K.

Book ID: 114617616
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 304 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.837383

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Two-Dimensional Analysis of Field-Plate

Two-Dimensional Analysis of Field-Plate Effects on Surface-State-Related Current Transients and Power Slump in GaAs FETs

✍ Horio, K.; Tanaka, T.; Itagaki, K.; Nakajima, A. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 235 KB

Analysis and Improvement of Intermodulat

Analysis and Improvement of Intermodulation Distortion in GaAs Power FET's

✍ Higgins, J.A.; Kuvas, R.L. 📂 Article 📅 1980 🏛 IEEE 🌐 English ⚖ 843 KB

Supression of drain conductance transien

Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET's using buried channels

✍ Canfield, P.; Forbes, L. 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 453 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs

✍ Yamada, T.; Horio, K. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys 🌐 English ⚖ 208 KB