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Nucleation of polycrystalline layer induced by formation of 30° partial dislocation during Si/Si(1 1 1) growth

✍ Scribed by R. Negishi; Y. Shigeta

No coin nor oath required. For personal study only.

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Nucleation of polycrystalline layer induced by formation of 30° partial dislocation during Si/Si(1&#xa0;1&#xa0;1) growth