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Nucleation in the epitaxial growth of silicon

โœ Scribed by J. Bloem


Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
203 KB
Volume
38
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES


Layer growth in silicon epitaxy
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Selective epitaxial growth (SEG) of silicon opens new avenues in electronic device design by allowing vertical (three dimensional) integrated circuits to be fabricated and isolation between devices to be vastly improved. In this work selective epitaxial silicon deposition is performed in an RF-heate