✦ LIBER ✦

NS junctions using high-mobility GaAs:AlGaAs heterostructures

✍ Scribed by David A Williams

Book ID: 102619731
Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 352 KB
Volume: 25
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1999.0716

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✦ Synopsis

The fabrication, analysis and measurement of superconductor/semiconductor junctions with GaAs:AlGaAs heterostructure channels is described. Microscopic analysis was used together with electrical measurement to optimize the characteristics of the annealed Sn and In alloy contacts, leading to the observation of ballistic electron mediated supercurrents. These contacts also had a high critical magnetic field, allowing the study of Andreev reflection at high fields. Epitaxially grown and unannealed single-crystal Al contacts showed high transparency.

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