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Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique

✍ Scribed by J.N. Burghartz; J. Warnock; J.D. Cressler; C.L. Stanis; R.C. McIntosh; J.Y.-C. Sun; J.H. Comfort; J.M.C. Stork; K.A. Jenkins; E.F. Crabbé; W. Lee; M. Gilbert

Book ID: 103598806
Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 325 KB
Volume: 19
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(92)90489-e

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