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Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si

✍ Scribed by R. People; J.C. Bean; S.K. Sputz; C.G. Bethea; L.J. Peticolas

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
488 KB
Volume
222
Category
Article
ISSN
0040-6090

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A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 µm with a peak-wavelength of λ p = 5 µm u