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Nonvolatile memory in thin film semiconductors

โœ Scribed by John R. Richardson


Book ID
118919182
Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
44 KB
Volume
2
Category
Article
ISSN
0022-3093

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Silicon-based thin films as bottom elect
โœ Seung-Yun Lee; Sung-Min Yoon; Kyu-Jeong Choi; Nam-Yeal Lee; Young-Sam Park; Sang ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 461 KB

The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While