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Nonvolatile ferroelectric-gate field-effect transistors using SrBi[sub 2]Ta[sub 2]O[sub 9]/Pt/SrTa[sub 2]O[sub 6]/SiON/Si structures

✍ Scribed by Tokumitsu, Eisuke; Fujii, Gen; Ishiwara, Hiroshi

Book ID: 121699806
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 214 KB
Volume: 75
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.124446

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