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Nonstoichiometric defects in silicon-doped GaAs epilayers grown on (111)A-and (111)B-oriented substrates

✍ Scribed by N. G. Yaremenko; G. B. Galiev; M. V. Karachevtseva; V. G. Mokerov; V. A. Strakhov

Book ID: 110206935
Publisher: SP MAIK Nauka/Interperiodica
Year: 2008
Tongue: English
Weight: 173 KB
Volume: 53
Category: Article
ISSN: 1028-3358
DOI: 10.1134/s1028335808040034

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