𝔖 Bobbio Scriptorium
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Nonparabolicity and intrinsic carrier concentration in Si and Ge

✍ Scribed by G. Gagliani; L. Reggiani


Book ID
112835019
Publisher
Springer-Verlag,Italian Physical Society
Year
1975
Weight
453 KB
Volume
30
Category
Article
ISSN
0369-3554

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Investigations of the nonohmic behaviour of intrinsic and near-intrinsic tellurium were performed by voltage probe measurements, double pulse experiments and measurements with T-shaped samples. It is shown, that the nonohmic behaviour for T> 180 K is not due to acoustoelectric amplification but is c