Nonlinearities in GaInAs/InP p-i-n photodetectors

✍ Scribed by Tongxi Wu; André Vander Vorst

• Book ID: 101269855
• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 361 KB
• Volume: 13
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/(sici)1098-2760(19961205)13:5<297::aid-mop15>3.0.co;2-4

✦ Synopsis

In this article we present the analysis and simulation of nonlinearities in the GaInAs/InP p-i-n photodetector at high illuminations. It u shown that the nonlinearities are generated principally in the low-field region of the intrinsic layer. The frequency response, especially for the nonlinear characteristics, is illustrated to differ significantly between top-illumination and substrate-illumination operations at common biasing level.