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Electrical and optical properties of InP nanowire ensemble p + –i–n + photodetectors

✍ Scribed by Pettersson, Håkan; Zubritskaya, Irina; Nghia, Ngo Tuan; Wallentin, Jesper; Borgström, Magnus T; Storm, Kristian; Landin, Lars; Wickert, Peter; Capasso, Federico; Samuelson, Lars


Book ID
121343830
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
633 KB
Volume
23
Category
Article
ISSN
0957-4484

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## Abstract Graded silicon nanowire (SiNW) p–n homojunctions were prepared by an electroless metal deposition method on as‐prepared planar Si p–n junctions made by the B^+^ diffusion method. The nanowire p–n junctions show good rectifying behavior and their turn‐on voltages (0.78 V at room temperat