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Electrical properties of zinc oxide nanowires and intramolecular p–n junctions

✍ Scribed by Liu, C. H.; Yiu, W. C.; Au, F. C. K.; Ding, J. X.; Lee, C. S.; Lee, S. T.

Book ID
120552261
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
610 KB
Volume
83
Category
Article
ISSN
0003-6951

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The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the