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Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides

✍ Scribed by Liu, Y.; Tsang, H. K.

Book ID
115428602
Publisher
Optical Society of America
Year
2006
Tongue
English
Weight
224 KB
Volume
31
Category
Article
ISSN
0146-9592

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Nonlinear absorption in silicon and the
Nonlinear absorption in silicon and the prospects of mid-infrared silicon Raman lasers
✍ Raghunathan, Varun ;Shori, Ramesh ;Stafsudd, Oscar M. ;Jalali, Bahram πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 125 KB

## Abstract We present the first experimental results of nonlinear absorption in silicon at the mid infrared wavelengths. Nonlinear losses due to two‐photon and free‐carrier absorption that are found to degrade near infrared silicon Raman devices become negligible at photon energies less than half