<p>The Army Materials and Mechanics Research Center of Waterยญ town, Massachusetts in cooperation with the Materials Science Group of the Department of Chemical Engineering and Materials Science of Syracuse University has conducted the Sagamore Army Materials Research Conference since 1954. The main
Nondestructive Evaluation of Semiconductor Materials and Devices
โ Scribed by James R. Ehrstein (auth.), Jay N. Zemel (eds.)
- Publisher
- Springer US
- Year
- 1979
- Tongue
- English
- Leaves
- 791
- Series
- NATO Advanced Study Institutes Series 46
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
From September 19-29, a NATO Advanced Study Institute on Nonยญ destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; acceleยญ rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of subยญ stantial immediate concern to the device technologies and end users.
โฆ Table of Contents
Front Matter....Pages i-xi
Two-Probe (Spreading Resistance) Measurements for Evaluation of Semiconductor Materials and Devices....Pages 1-66
Four-Terminal Nondestructive Electrical and Galvanomagnetic Measurements....Pages 67-104
Characterization of Surface States at the Si-SiO 2 Interface....Pages 105-148
Steady-State and Non-Steady-State Characterization of MOS Devices....Pages 149-199
Semiconductor Material Evaluation by Means of Schottky Contacts....Pages 201-256
Noise....Pages 257-314
Optical Characterization of Semiconductors....Pages 315-395
Use of Photoemission and Related Techniques to Study Device Fabrication....Pages 397-456
Scanned Photovoltage and Photoemission....Pages 457-514
SEM Methods for the Characterization of Semiconductor Materials and Devices....Pages 515-580
Backscattering Spectrometry and Related Analytical Techniques....Pages 581-630
The Acoustic Microscope: A Tool for Nondestructive Testing....Pages 631-676
Non-Destructive Tests Used to Insure the Integrity of Semiconductor Devices with Emphasis on Passive Acoustic Techniques....Pages 677-738
Lifetime Data Analysis....Pages 739-769
Back Matter....Pages 771-782
โฆ Subjects
Electrical Engineering
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