Non-Markovian damping of Rabi oscillations in semiconductor quantum dots
β Scribed by Mogilevtsev, D; Nisovtsev, A P; Kilin, S; Cavalcanti, S B; Brandi, H S; Oliveira, L E
- Book ID
- 120314079
- Publisher
- Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 304 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0953-8984
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π SIMILAR VOLUMES
Excitonic ground state Rabi oscillations in InAs quantum dots are studied via an ultrafast spectral hole burning technique. From comparison with frequency domain data, we find that acoustic phonon-induced dephasing processes damp the oscillations.
Within a general approach suitable to describe a coherently driven two-level system interacting with a dephasing reservoir, we have proposed various mechanisms to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized two-level semiconductor systems. W