Excitonic ground state Rabi oscillations in InAs quantum dots are studied via an ultrafast spectral hole burning technique. From comparison with frequency domain data, we find that acoustic phonon-induced dephasing processes damp the oscillations.
Rabi oscillation damping of two-level states in quantum dots
β Scribed by D. Mogilevtsev; A.P. Nisovtsev; S. Kilin; S.B. Cavalcanti; H.S. Brandi; L.E. Oliveira
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 162 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
β¦ Synopsis
Within a general approach suitable to describe a coherently driven two-level system interacting with a dephasing reservoir, we have proposed various mechanisms to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized two-level semiconductor systems. We have shown that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Furthermore, we have also shown that stationary as well as non-stationary effects resulting from the coupling to the environment may give rise to intensity-dependent damping of oscillations.
π SIMILAR VOLUMES