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Non-dissociation of Lomer–Cottrell dislocations and 〈110〉{001} slip in silicon

✍ Scribed by Korner, A.; Martinez-hernandez, M.; George, A.; K. Kirchner, H. O.

Book ID: 120993459
Publisher: Taylor and Francis Group
Year: 1987
Tongue: English
Weight: 365 KB
Volume: 55
Category: Article
ISSN: 0950-0839
DOI: 10.1080/09500838708228740

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## Abstract Properties of straight edge dislocations on {110} and {001} slip planes are calculated by means of atomistic procedures. The energies of dislocation cores of radius 3__b__ are 6.86 × 10^—5^and 7.43 ×10^—5^ erg/cm, respectively. Detailed investigations on convergence yield similar Coulom